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| High Precision Hall-Effect Switch Data Sheet Version 1.0 2004-03-04 TLE4946-1L Features * * * * * * * * * * * * 2.7V to 24V supply voltage operation Operation from unregulated power supply High sensitivity and high stability of the magnetic switching points High resistance to mechanical stress by Active Error Compensation Reverse battery protection (-18V) Superior temperature stability Peak temperatures up to 195C without damage Low jitter (typ. 1s) High ESD performance (6kV HBM) Digital output signal Unipolar version Leaded package P-SSO-3-2 P-SSO-3-2 Type TLE4946-1L Ordering Code Q62705-K0733 Package P-SSO-3-2 Functional Description The TLE4946-1L is an integrated circuit Hall-effect sensor designed specifically for highly accurate automotive and industrial applications. Precise magnetic switching points and high temperature stability are achieved by active compensation circuits and chopper techniques on chip. TLE4946-1L Circuit Description The chopped Hall IC Switch comprises a Hall probe, bias generator, compensation circuits, oscillator and output transistor. The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilize the temperature behavior and reduce technology variations. The Active Error Compensation rejects offsets in signal stages and the influence of mechanical stress to the Hall probe caused by molding and soldering processes and other thermal stresses in the package. This chopper technique together with the threshold generator and the comparator ensure high accurate magnetic switching points. Figure 1: Block Diagram Data Sheet 2/9 2004-03-04 TLE4946-1L Pin Configurations Figure 2: Pin Configuration Pin Definition and Functions Pin 1 2 3 Symbol VS GND Q Function Supply voltage Ground Output Data Sheet 3/9 2004-03-04 TLE4946-1L Absolute Maximum Ratings Tj = -40 to 150C Parameter Supply Voltage Supply Current through protection device Output Voltage Continuous Output Current Junction Temperature Symbol VS IS VQ IQ Tj min. -18 -18 -18 -50 -0.7 -0.7 -50 max. 18 24 26 +50 18 26 +50 Unit V mA V for 5 min @ 1.2 kOhm pull up mA Conditions for 1h ,Rs>=200 Ohm for 5min, Rs>=200 Ohm 155 C for 2000 h (not additive) 165 for 1000 h (not additive) 175 for 168 h (not additive) 195 for 3x1 h (additive) Storage Temperature TS -40 150 C Magnetic Flux Density B unlimit. mT Note: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ESD Protection Human Body Model (HBM) tests according to: EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method 3015.7 Parameter ESD Voltage Symbol VESD max. 6 Unit kV Conditions HBM, R= 1.500 Ohm, C= 100pF; TA= 25C Operating Range Parameter Supply Voltage Output Voltage Junction Temperature Output Current Symbol VS VQ Tj IQ min. 2.7 -0.7 -40 0 typ. max. 18 24 26 18 150 175 20 Unit V V C for 168 h mA Conditions 1h with RS >= 200 Ohm for 5min RS >= 200 Ohm Data Sheet 4/9 2004-03-04 TLE4946-1L AC/DC Characteristics over operating range, unless otherwise specified. Typical values correspond to VS=12V and TA=25C. Parameter Supply Current Reverse Current Output Saturation Voltage Output Leakage Current Output Fall Time Output Rise Time Chopper Frequency Switching Frequency 2) Delay Time 3) Output Jitter Symbol IS ISR VQSAT IQLEAK tf tr fOSC fSW td tQJ min. 2 0 0 typ. 4 0.2 0.3 0.05 0.02 0.4 320 13 1 max. 6 1 0.6 10 1 1 1) 15 Unit mA mA V A s s kHz kHz s sRMS Conditions VS = 2.7V .. 18V VS= -18V IQ= 20mA for VQ=18 V RL= 1.2 kOhm ;CL=50pF RL= 1.2 kOhm ;CL=50pF BREP Repeatability of magnetic 20 TRMS 4) thresholds 5) Power-On Time tPON 13 s VS >= 2.7V 6) Thermal Resistance RthJA 190 K/W P-SSO-3-2 1) To operate the sensor at the max. switching frequency, the value of the magnetic signal amplitude must be 1.4 times higher than for static fields. This is due to the -3dB corner frequency of the low pass filter in the signal path. 2) Systematic delay between magnetic threshold reached and output switching. 3) Jitter is the unpredictable deviation of the output switching delay. 4) BREP is equivalent to the noise constant. 5) Time from applying VS >= 2.7 V to the sensor until the output state is valid. 6) Thermal resistance from junction to ambient. e.g.: VS=12.0 V, IS_typ=4 mA, VQSAT_typ=0.3 V, IQ=20 mA => Power Dissipation Pdis=54.0 mW. In TA = Tj - (RthJA * Pdis) = 175 C - (190 K/W * 0.054 W) => TA = 164.7 C B = Square-Wave Signal 1kHz B/t>12mT/ms Magnetic Characteristics over operating range, unless otherwise specified. Typical values correspond to VS=12V. Parameter Operate Point TLE4946-1L Release Point TLE4946-1L Hysteresis TLE4946-1L Symbol BOP Tj [C] -40 25 150 -40 25 150 -40 25 150 min. 11.3 11.0 10.5 -19.5 -19.0 -18.1 22.0 typ. 15.4 15.0 14.3 -15.4 -15.0 -14.3 30.0 max. 19.5 19.0 18.1 mT -11.3 -11.0 -10.5 mT 38.0 Unit mT Conditions BRP BHYS Temperature TC ppm/C Compensation of -350 Magnetic Thresholds Positive magnetic fields related with south pole of magnet to the branded side of package. Note: Typical characteristics specify mean values expected over the production spread. Data Sheet 5/9 2004-03-04 TLE4946-1L Timing Diagram A p p li e d m a g n e ti c fi e ld BOP BRP VQ 90% 10% tf td tr td Figure 3: Timing Definition Data Sheet 6/9 2004-03-04 TLE4946-1L Package Dimension P-SSO-3-2 0.8 x 45 0.2 12.7 1 1.9 MAX. 0.15 MAX. 4.06 0.08 4.19 0.05 1.52 0.05 0.35 x 45 3 0.06 0.08 3.29 (0.25) 0.79 0.2 +0.1 23.8 0.5 0.4 0.05 1 1.27 0.25 3 9 +0.75 -0.5 38 MAX. 18 0.5 6 0.5 Adhesive Tape 0.25 -0.15 Tape 6.35 0.4 4 12.7 0.3 0.3 0.5 0.1 Figure 4: Package Dimension Figure 5: Distance Chip to Upper Side of IC Data Sheet 7/9 2004-03-04 1 -1 TLE4946-1L Figure 6: Marking Data Sheet 8/9 2004-03-04 TLE4946-1L TLE4946-1L Revision History: Version 1.0 Previous Version: Page Subjects (major changes since last revision) 2004-03-04 For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: feedback.sensors@infineon.com Edition 2001-02-22 Published by Infineon Technologies AG St.-Martin-Strasse 53 D-81541 Munchen (c) Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 9/9 2004-03-04 |
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